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| VMB150-28 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI VMB150-28 is Designed for D PACKAGE STYLE .500 6L FLG C A 2x ON FULL R FEATURES: * * * OmnigoldTM Metalization System DIM B G .725/18,42 F K H MINIMUM inches / mm E M L J I MAXIMUM inches / mm MAXIMUM RATINGS IC VCB VCE PDISS TJ TSTG JC O A B C D E F G H I J K L M N .150 / 3.43 .045 / 1.14 .210 / 5.33 .835 / 21.21 .200 / 5.08 .490 / 12.45 .003 / 0.08 .125 / 3.18 .725 / 18.42 .970 / 24.64 .090 / 2.29 .150 / 3.81 .160 / 4.06 10 A 60 V 35 V 140 W @ TC = 25 OC -65 C to +200 C -65 OC to +150 OC 0.65 OC/W O .220 / 5.59 .865 / 21.97 .210 / 5.33 .510 / 12.95 .007 / 0.18 .980 / 24.89 .105 / 2.67 .170 / 4.32 .285 / 7.24 .120 / 3.05 .135 / 3.43 ORDER CODE: ASI10750 CHARACTERISTICS SYMBOL BVCEO BVCER BVEBO ICES hFE Cob PG C IC = 50 mA IC = 50 mA IE = 10 mA VE = 28 V TC = 25 C O NONETEST CONDITIONS RBE = 10 MINIMUM TYPICAL MAXIMUM 35 60 4.0 5 UNITS V V V mA --pF dB VCE = 5.0 V VCB = 28 V VCC = 28 V IC = 1.0 A f = 1.0 MHz POUT = 150 W f = 88 MHz 10 100 335 13 60 % A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE * NORTH HOLLYWOOD, CA 91605 * (818) 982-1200 * FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1 |
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